Перегляд за автором "Kovalyuk, Z.D."

Сортувати за: Порядок: Результатів:

  • Comparison of optical properties of TiO₂ thin films prepared by reactive magnetron sputtering and electron-beam evaporation techniques 
    Brus, V.V.; Kovalyuk, Z.D.; Parfenyuk, O.A.; Vakhnyak, N.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The envelope method was used to determine optical constants of TiO₂ thin films deposited by DC reactive magnetron sputtering and electron-beam evaporation techniques. The density and thickness of the thin films were ...
  • Dielectric characteristics of GaSe nanocrystals intercalated with hydrogen 
    Kaminskii, V.I.; Kovalyuk, Z.D.; Netyaga, V.V.; Boledzyuk, V.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The results of investigations of dielectric characteristics of GaSe nanocrystals and their hydrogen intercalates are presented. By using the impedance spectroscopy method, it is established that the dielectric spectra ...
  • Diluted magnetic layered semiconductor InSe:Mn with high Curie temperature 
    Lashkarev, G.V.; Sichkovskyi, V.I.; Radchenko, M.V.; Aleshkevych, P.; Dmitriev, O.I.; Butorin, P.E.; Kovalyuk, Z.D.; Szymczak, R.; Slawska-Waniewska, A.; Nedelko, N.; Yakiela, R.; Balagurov, A.M.; Beskrovnyy, A.I.; Dobrowolsk, W. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    We present a detailed study of layered semiconductor InSe doped with Mn. Xray and neutron diffraction analyses of (In,Mn)Se single crystals show the presence of a main phase as In₁−xMnxSe solid solution, the second ...
  • Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact 
    Kovalyuk, Z.D.; Sydor, O.M.; Netyaga, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Photosensitive heterojunctions were created by the method of optical contact of layered semiconductor InSe to CuInSe₂ plates. Due to high quality of contacting surfaces, a strong and enough perfect electrical junction is ...
  • Electrical properties of fast cooled InSe single crystals 
    Zaslonkin, A.V.; Kovalyuk, Z.D.; Mintyanskii, I.V.; Savitskii, P.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    Influence of fast cooling on electrical properties of n-InSe single crystals is investigated for an ingot grown by the Bridgman method. Electrical characteristics and their anisotropy are investigated in the temperature ...
  • Electrical properties of fast cooled inse single crystals 
    Zaslonkin, A.V.; Kovalyuk, Z.D.; Mintyanskii, I.V.; Savitskii, P.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    Influence of fast cooling on electrical properties of n-InSe single crystals is investigated for an ingot grown by the Bridgman method. Electrical characteristics and their anisotropy are investigated in the temperature ...
  • Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe 
    Tkachuk, I.G.; Orletsky, I.G.; Kovalyuk, Z.D.; Marianchuk, P.D. (Functional Materials, 2018)
    Conditions for production of photosensitive anisotypic n-FeS₂/p-InSe heterojunctions by the method of low-temperature spray-pyrolysis of thin films of pyrite on crystalline p-InSe substrates are studied. On the basis of ...
  • Excitonic photoconductivity of heterostructures based on gallium and indium selenides 
    Katerynchuk, V.M.; Kovalyuk, Z.D.; Tkachuk, I.G. (Functional Materials, 2017)
    Present spectra of photosensitivity of various types of heterojunctions based on layered crystals A³B⁶ made of the Van der Waals connection of pairs on heteromer as well as covalent. We also discuss the features of excitonic ...
  • Fine structure of NQR spectra in GaSe 
    Kovalyuk, Z.D.; Lastivka, G.I.; Khandozhko, О.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Peculiarities of the observation of nuclear quadrupole resonance (NQR) in GaSe crystals grown from melt are under investigations. The splitting of a resonance NQR line by two identical spectra is caused by the availability ...
  • Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe 
    Kovalyuk, Z.D.; Duplavyy, V.Y.; Sydor, O.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    n-InS/p-InSe heterojunctions were obtained by annealing p-InSe samples in sulphur vapours. By means of the atomic force microscopy method, topology of InS film surface was investigated. Current-voltage characteristics of ...
  • Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis 
    Kushnir, B.V.; Kovalyuk, Z.D.; Katerynchuk, V.M.; Netyaga, V.V.; Tkachuk, I.G. (Functional Materials, 2017)
    A new heterojunction (GP) p-FeIn₂Se₄-n-In₄Se₃ was formed by the mechanical contact of the FeIn₂Se₄ plate with the van der Waals surface of In₄Se₃. Investigation of Volt-Farada's, spectral characteristics and temperature ...
  • Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions 
    Kovalyuk, Z.D.; Makhniy, V.P.; Yanchuk, O.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Voltage-current characteristics forwardly biased heterojunctions p-GaSe-n-InSe made by the method of optical contact are analyzed. Asit was ascertained, the forward current is determined by tunnel-recombination processes ...
  • Morphology of Van der Waals surfaces and magnetic hysteresis in cobalt intercalated InTe 
    Boledzyuk, V.B.; Kovalyuk, Z.D.; Kudrynskyi, Z.R.; Shevchenko, A.D. (Functional Materials, 2015)
    The influence of Co²⁺ intercalation on the properties of InTe monocrystals was investigated. The intercalation of cobalt in InTe are not leading to change of the crystal lattice parameters, leaving the same structural type ...
  • On Wannier exciton 2D localization in hydrogen intercalated InSe and GaSe layered semiconductor crystals 
    Zhirko, Yu.I.; Zharkov, I.P.; Kovalyuk, Z.D.; Pyrlja, M.M.; Boledzyuk, V.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Exciton absorption spectra of layered InSe and GaSe crystals electrochemically intercalated by hydrogen were investigated. It was found that the observed at T = 80 K non-monotonic shift of the exciton absorption peak n = ...
  • Optical properties of GaSe semiconducting crystals intercalated by CdTe nanoparticles 
    Khalavk, Y.B.; Shcherbak, L.P.; Pyrlya, M.M.; Boledzyuk, V.B.; Kovalyuk, Z.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The transmission spectra of GaSe crystals intercalated by CdTe nanoparticles (NPs) from aqueous colloidal solutions were investigated at 77 K in the range of GaSe excitonic absorption. Solutions of two types – yellow ...
  • Physical properties of layered FeIn₂Se₄ single crystals 
    Boledzyuk, V.B.; Kovalyuk, Z.D.; Kudrynskyi, Z.R.; Ivanov, V.I.; Shevchenko, A.D. (Functional Materials, 2016)
    Single crystals of FeIn₂Se₄ having a hexagonal structure and mirror-like cleaved surfaces were grown by the Bridgman method. X-ray spectroscopic analysis of the grown crystals was carried out. The morphology of their surface ...
  • Sheet resistance and surface topology time dynamics of intrinsic oxide film on InSe crystals 
    Katerynchuk, V.M.; Kovalyuk, Z.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    It has been shown that a result of InSe crystal oxidation is formation of an intrinsic oxide film that has not insulating but conductive properties. This conductive film forms a potential barrier with the semiconductor ...
  • Structure and electrical properties of In₂Se₃Mn layered crystals 
    Kaminskii, V.M.; Kovalyuk, Z.D.; Zaslonkin, A.V.; Ivanov, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Investigations of the crystalline structure and electrical properties of In₂Se₃ 1 wt. %Mn and In₂Se₃ 6 wt. % Mn crystals have been carried out. We have found formation of a substitutional solid solution for In₂Se₃ 1 ...
  • Study of supercapacitors with a double electrical layer based on activated carbon materials 
    Budzulyak, I.M.; Kovalyuk, Z.D.; Motsnyi, F.V.; Orletskyi, V.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    It is proposed ecologically pure technology to obtain activated carbon. On the base of this carbon the supercapacitors were manufactured. Their characteristics were determined and compare with analogs obtained using ...
  • The electric field gradient asymmetry parameter in InSe 
    Kovalyuk, Z.D.; Khandozhko, A.G.; Lastivka, G.I.; Samila, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The complex NQR spectra of ¹¹⁵In caused by presence of structural defects called polytypes are observed in a monocrystalline InSe sample. Multiple ratio of average frequencies of NQR spectra that correspond to four ...